Thermal ionization energy of hydrogen-like impurities in semiconductor materials
نویسندگان
چکیده
منابع مشابه
Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields
We present a detailed theoretical study of the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for ground (1s) and first excited (2s) states, E1s and E2s, on intensity and frequency of the THz radiation has been examined for a GaAs-based system. It is found that E1s, E2s ...
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ژورنال
عنوان ژورنال: Journal of the Belarusian State University. Physics
سال: 2020
ISSN: 2617-3999,2520-2243
DOI: 10.33581/2520-2243-2020-2-28-41